The GL4 HE & GL8 HE & GL12 HE series nanoimprint lithography equipment combines UV-NIL and thermal-NIL (Hot Embossing - HE) functions, allowing UV-NIL and thermal-NIL processes to be carried out separately or simultaneously in-situ.
It enables semi-automatic imprinting of high-resolution (higher than 10nm *) and high-aspect-ratio (greater than 10: 1 *) nanostructures on up to 100mm/200mm/300mm wafers, supporting rigid or flexible molds. Working stamps, which have high resolution and a long service life, can be replicated by the machine in a wide range of materials, significantly reducing the cost of large-area molds in nanoimprint processes. The use of uniform gas pressure guarantees large-area imprinting uniformity and replication fidelity. The GL4 HE & GL8 HE & GL12 HE are suitable for R&D or small volume production of DOEs, AR / VR waveguides (including slanted gratings), WGPs, metalenses, biochips, LED PSSs, MLAs and myriad other applications.
Full-field nanoimprint equipment combining UV-NIL and thermal-NIL functions, for replication of high-resolution, high-aspect-ratio nanostructures on up to 100mm/200mm/300mm wafers.
UV- and thermal-NIL processes can be carried out separately or simultaneously in-situ in a single imprint sequence.
Uniform gas pressure up to 50/80 bar guarantees large-area imprint uniformity and replication fidelity.
Internal working stamps replication, reducing the cost of large-area molds in nanoimprint processes.
High power UV LED panel (365nm, light intensity >1000mW/cm2), light sources of different power and wavelength can be provided according to customer specifications, perfectly supporting a variety of commercial nanoimprint materials.
Mini-environment as standard.
Based on our experiences, we have created nanoimprint process and material starter-kits to be delivered with our products, enabling our customers to immediately make use of the world-leading level of nanoimprint technology.
Substrate size |
≤300x300mm (GL12 HE) ≤200×200mm（GL8 HE） ≤100x100mm (GL4 HE) |
Mold size |
≤300x300mm (GL12 HE) ≤200×200mm（GL8 HE） ≤100x100mm (GL4 HE) |
Supported NIL process |
UV-NIL function Thermal-NIL (Hot embossing - HE) function Simultaneous UV-NIL & thermal-NIL in-situ in one imprint sequence |
Wafer loading & unloading |
Manual loading and unloading |
Pressure application method |
Uniform gas pressure guarantees large-area imprint uniformity |
Imprint pressure |
≤50bar (GL12 HE) ≤50bar (GL8 HE, 80bar customized) ≤80bar (GL4 HE) |
Imprint Temperature |
RT ~ 250℃, setting accuracy ±1℃ |
Resolution |
Higher than 10nm* |
Aspect ratio |
Greater than 10:1* |
Residual layer thickness（RLT） |
Less than 10nm* |
UV curing light source |
High power UV LED panel light source (365nm）, Exposure area≥300×300mm（GL12 HE）/ ≥200×200mm（GL8 HE）/ ≥100×100mm（GL4 HE） light intensity >1000mW/cm2 (2000mw/cm2 optional) Exposure uniformity better than 90%* |
Mini-environment and climate control |
Standard, external environment class 100, internal environment better than class10* |
Automatic imprinting |
Supported |
Automatic working stamp replication |
Supported |
Automatic alignment |
Optional (accuracy greater than ±1um*) |